ELECTRONIC CIRCUITS AND MEASUREMENTS

This course is one of the compulsory educational activities of the Degree Course in Physical Engineering. It provides the knowledge to understand and analyze the static and dynamic behaviour of RLC circuits , the physics and the operation of the main solid-state electronic devices (mainly diodes and MOSFETs) and their use for the realization of analog and digital electronic circuits and components (amplifiers, logic gates, memories, etc.). The first part of the course deals with the understanding and analysis of linear circuits (linear circuits, frequency analysis, Bode diagram) and with the concepts of semiconductor physics of diodes and transistors and their modeling. The class lectures are complemented by laboratory activities during which the students will be able to simulate and experimentally measure the main parameters of elementary circuits using the appropriate instrumentation.

At the end of the course the student will have learned to solve simple electrical circuits both in time and in frequency through the nodal analysis and the use of the main network theorems. Furthermore he will have learned the basics of semiconductor physics and the functioning of silicon devices such as the pn junction and the MOSFET transistor both in static and dynamic functioning.

Advanced knowledge of mathematics (Analysis 1 and Analysis 2), and the course of Fundamentals of Telecommunications and Mathematical Methods for Physics and Engineering.

Reti circuitali
1. Intro and resistive circuits
2. resistive circuitsi 2
3. Theorems (Thevenin, Northon)
4. Dynamic Bipoles
5. Sinusoidal regime and phasors
6. Power in sinusoidal regime
7. Laplace 1
8. Laplace 2
9. LTI systems and transfer function
10. Examples of LTI systems
11. Bode 1
12. Bode 2
13. passive filters
14. examples of non-electrical circuits
Semiconductors devices
15. recap of main concepts of electromagnetism and quantum physics
16. structures and properties of semiconductors 1
17. structures and properties of semiconductors 2
18. semiconductors at thermal equilibrium
19. transport in semiconductors 1
20. transport in semiconductors 2
21. pn junction at equilibrium 1
22. pn junction at equilibrium 1
23. pn junction out of equilibrium 1
24. pn junction out of equilibrium 2
25. pn junction dynamic behaviour
26. structure MOS 1
27. structure MOS 2
28. Transistor MOSFET
29. Transistor MOSFET
30. Transistor MOSFET

- Alexander, Charles K., et al. Circuiti elettrici. McGraw-Hill, 2014
- S. M. Sze, Dispositivi a semiconduttore, Hoepli, 1991
- G. Ghione Dispositivi per la Microelettronica McGraw-Hill 1998

The exam is divided into two parts: partA covering circuits and partB covering semiconductors. The final grade will be the average of the two scores. The exam is considered passed if both parts are passed (partA & partB >18).

The exam will be written and will consist of exercises similar to those done in class. There may be group projects during the course that will contribute to the final grade (maximum 2-3 points). During the exam, the use of notes, books, and other study materials is not allowed. A formula sheet, if necessary, will be provided during the exam. The oral exam is optional and upon the student's request.

Lectures and exercises. Laboratory with computer simulator and small experiments in the lab

Italian

the course is in italian

written and oral